GSM3414S mosfet equivalent, 20v n-channel enhancement mode mosfet.
* 20V/5.8A,RDS(ON)=25mΩ@VGS=4.5V
* Super high density cell design for extremely
low RDS (ON)
* Exceptional on-resistance and maximum DC
current capability
Features
* 20V/5.8A,RDS(ON)=25mΩ@VGS=4.5V
* Super high density cell design for extremely
low RDS (ON)
* Ex.
GSM3414S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.
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