GS66516T transistor equivalent, top cooled 650v enhancement mode gan transistor.
* 650 V enhancement mode power transistor
* Top-side cooled configuration
* RDS(on) = 25 mΩ
* IDS(max) = 60 A
* Ultra-low FOM die
* Low inductance.
* AC-DC Converters
* DC-DC Converters
* Bridgeless Totem Pole PFC
* Inverters
* Energy Storage Syste.
The GS66516T is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Te.
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