GS66506T transistor equivalent, top cooled 650v enhancement mode gan transistor.
* 650 V enhancement mode power transistor
* Top-side cooled configuration
* RDS(on) = 67 mΩ
* IDS(max) = 22.5 A
* Ultra-low FOM die
* Low inductan.
* AC-DC Converters
* DC-DC converters
* Uninterruptable Power Supplies
* Industrial Motor Drives
* A.
The GS66506T is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Te.
Image gallery
TAGS
Download (Size : 888.39KB)