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GS66508P - Bottom-side cooled 650V E-mode GaN transistor

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GaN Systems

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GS66508P Bottom-side cooled 650V E-mode GaN transistor by GaN Systems - Datasheet Preview — Datasheet preview – GS66508P

Datasheet Details

Part number	GS66508P
Manufacturer	GaN Systems
File Size	1.02 MB
Description	Bottom-side cooled 650V E-mode GaN transistor
Datasheet	GS66508P Datasheet
Additional preview pages of the GS66508P datasheet.

GS66508P Product details

Description

The GS66508P is an enhancement mode GaN-onsilicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield.

Features

650 V enhancement mode power switch.
Bottom-side cooled configuration.
RDS(on) = 50 mΩ.
IDS(max) = 30 A.
Ultra-low FOM Island Technology® die.
Low inductance GaNPX® package.
Easy gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
Very high switching frequency (> 100 MHz).
Fast and controllable fall and rise times.
Reverse current capability.
Zero reverse.

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Published: Apr 14, 2017 |