GS66508P transistor equivalent, bottom-side cooled 650v e-mode gan transistor.
* 650 V enhancement mode power switch
* Bottom-side cooled configuration
* RDS(on) = 50 mΩ
* IDS(max) = 30 A
* Ultra-low FOM Island Technology® die
* High efficiency power conversion
* High density power conversion
* AC-DC Converters
* Bridgeless Totem.
The GS66508P is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die.
Image gallery
TAGS
Download (Size : 1.02MB)