GS66508B transistor equivalent, bottom-side cooled 650v e-mode gan transistor.
* 650 V enhancement mode power transistor
* Bottom-side cooled configuration
* RDS(on) = 50 mΩ
* IDS(max) = 30 A
* Ultra-low FOM die
* Low inducta.
* AC-DC Converters
* DC-DC Converters
* Bridgeless Totem Pole PFC
* Inverters
* Energy Storage Syste.
The GS66508B is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Te.
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