GS66516B transistor equivalent, bottom-side cooled 650v e-mode gan transistor.
* 650 V enhancement mode power transistor
* Bottom-side cooled configuration
* RDS(on) = 25 mΩ
* IDS(max) = 60 A
* Ultra-low FOM die
* Low inducta.
* AC-DC Converters
* DC-DC Converters
* Bridgeless Totem Pole PFC
* Inverters
* Energy Storage Syste.
The GS66516B is an enhancement mode GaN on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island T.
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