Datasheet Summary
GS66502B Bottom-side cooled 650 V E-mode GaN transistor
Features
- 650 V enhancement mode power transistor
- Bottom-side cooled configuration
- RDS(on) = 200 mΩ
- IDS(max) = 7.5 A
- Ultra-low FOM die
- Low inductance GaNPX® package
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 5.0 x 6.6 mm2 PCB footprint
- RoHS3 (6 + 4) pliant
Package Outline Circuit Symbol
Applications
- AC-DC Converters
- DC-DC converters
- Uninterruptable Power Supplies
- Industrial Motor Drives
- Appliance...