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GS66502B - 650V enhancement mode GaN transistor

Datasheet Summary

Description

The GS66502B is an enhancement mode GaN-onsilicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Features

  • 650 V enhancement mode power transistor.
  • Bottom-side cooled configuration.
  • RDS(on) = 200 mΩ.
  • IDS(max) = 7.5 A.
  • Ultra-low FOM die.
  • Low inductance GaNPX® package.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • Very high switching frequency (> 10 MHz).
  • Fast and controllable fall and rise times.
  • Reverse current capability.
  • Zero reverse recovery los.

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Datasheet preview – GS66502B

Datasheet Details

Part number GS66502B
Manufacturer GaN Systems
File Size 851.38 KB
Description 650V enhancement mode GaN transistor
Datasheet download datasheet GS66502B Datasheet
Additional preview pages of the GS66502B datasheet.

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Full PDF Text Transcription

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GS66502B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 200 mΩ • IDS(max) = 7.5 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching frequency (> 10 MHz) • Fast and controllable fall and rise times • Reverse current capability • Zero reverse recovery loss • Small 5.0 x 6.
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