GS66502B transistor equivalent, 650v enhancement mode gan transistor.
* 650 V enhancement mode power transistor
* Bottom-side cooled configuration
* RDS(on) = 200 mΩ
* IDS(max) = 7.5 A
* Ultra-low FOM die
* Low induc.
* AC-DC Converters
* DC-DC converters
* Uninterruptable Power Supplies
* Industrial Motor Drives
* A.
The GS66502B is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Te.
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