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GS66502B - 650V enhancement mode GaN transistor

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GaN Systems

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GS66502B 650V enhancement mode GaN transistor by GaN Systems - Datasheet Preview — Datasheet preview – GS66502B

Datasheet Details

Part number	GS66502B
Manufacturer	GaN Systems
File Size	851.38 KB
Description	650V enhancement mode GaN transistor
Datasheet	GS66502B Datasheet
Additional preview pages of the GS66502B datasheet.

Product details

Description

The GS66502B is an enhancement mode GaN-onsilicon power transistor.

Features

650 V enhancement mode power transistor.
Bottom-side cooled configuration.
RDS(on) = 200 mΩ.
IDS(max) = 7.5 A.
Ultra-low FOM die.
Low inductance GaNPX® package.
Simple gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
Very high switching frequency (> 10 MHz).
Fast and controllable fall and rise times.
Reverse current capability.
Zero reverse recovery los.

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Published: Apr 14, 2017 |