GS66502B Datasheet 650v Enhancement Mode Gan Transistor

Manufacturer: GaN Systems

Overview: GS66502B Bottom-side cooled 650 V E-mode GaN transistor Datasheet.

Datasheet Details

Part number	GS66502B
Manufacturer	GaN Systems
File Size	851.38 KB
Description	650V enhancement mode GaN transistor
Datasheet	GS66502B-GaNSystems.pdf

General Description

The GS66502B is an enhancement mode GaN-onsilicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Key Features

650 V enhancement mode power transistor.
Bottom-side cooled configuration.
RDS(on) = 200 mΩ.
IDS(max) = 7.5 A.
Ultra-low FOM die.
Low inductance GaNPX® package.
Simple gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
Very high switching frequency (> 10 MHz).
Fast and controllable fall and rise times.
Reverse current capability.
Zero reverse recovery los.

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