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GS66502B - 650V enhancement mode GaN transistor

General Description

The GS66502B is an enhancement mode GaN-onsilicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Key Features

  • 650 V enhancement mode power transistor.
  • Bottom-side cooled configuration.
  • RDS(on) = 200 mΩ.
  • IDS(max) = 7.5 A.
  • Ultra-low FOM die.
  • Low inductance GaNPX® package.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • Very high switching frequency (> 10 MHz).
  • Fast and controllable fall and rise times.
  • Reverse current capability.
  • Zero reverse recovery los.

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Datasheet Details

Part number GS66502B
Manufacturer GaN Systems
File Size 851.38 KB
Description 650V enhancement mode GaN transistor
Datasheet download datasheet GS66502B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GS66502B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 200 mΩ • IDS(max) = 7.5 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching frequency (> 10 MHz) • Fast and controllable fall and rise times • Reverse current capability • Zero reverse recovery loss • Small 5.0 x 6.