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GS66508T - Top cooled 650V enhancement mode GaN transistor

Description

The GS66508T is an enhancement mode GaN-onsilicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Features

  • 650 V enhancement mode power transistor.
  • Top-side cooled configuration.
  • RDS(on) = 50 mΩ.
  • IDS(max) = 30 A.
  • Ultra-low FOM die.
  • Low inductance GaNPX® package.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 / +10V).
  • Very high switching frequency (> 10 MHz).
  • Fast and controllable fall and rise times.
  • Reverse current capability.
  • Zero reverse recovery loss.

📥 Download Datasheet

Datasheet preview – GS66508T

Datasheet Details

Part number GS66508T
Manufacturer GaN Systems
File Size 0.97 MB
Description Top cooled 650V enhancement mode GaN transistor
Datasheet download datasheet GS66508T Datasheet
Additional preview pages of the GS66508T datasheet.

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Full PDF Text Transcription

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GS66508T Top-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Top-side cooled configuration • RDS(on) = 50 mΩ • IDS(max) = 30 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 / +10V) • Very high switching frequency (> 10 MHz) • Fast and controllable fall and rise times • Reverse current capability • Zero reverse recovery loss • Small 7.0 x 4.
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