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Fairchild Semiconductor Electronic Components Datasheet

FDR8305N Datasheet

Dual N-Channel 2.5V Specified PowerTrench MOSFET

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November 1999
FDR8305N
Dual N-Channel 2.5V Specified PowerTrenchMOSFET
General Description
These N-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Applications
Load switch
Motor driving
Power Management
Features
4.5 A, 20 V. RDS(ON) = 0.022 @ VGS = 4.5 V
RDS(ON) = 0.028 @ VGS = 2.5 V.
Low gate charge (16.2nC typical).
Fast switching speed.
High performance trench technology for extremely
low RDS(ON).
Small footprint (38% smaller than a standard SO-8);low
profile package (1 mm thick); power handling capability
similar to SO-8.
D2
D2
D1
D1
5
6
SuperSOT TM-8
S2
G2
S1
G1
7
8
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, Tstg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
(Note 1a)
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.8305
FDR8305N
13’’
4
3
2
1
Ratings
20
±8
4.5
20
0.8
-55 to +150
Units
V
V
A
W
°C
156 °C/W
40 °C/W
Tape Width
12mm
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FD8305N Rev. C


Fairchild Semiconductor Electronic Components Datasheet

FDR8305N Datasheet

Dual N-Channel 2.5V Specified PowerTrench MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
IGSSR
Gate-Body Leakage Current,
Reverse
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to
25°C
VDS = 16 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS = 0 V
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to
25°C
RDS(on)
ID(on)
gFS
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
VGS = 4.5 V, ID = 4.5 A
VGS=4.5 V, ID=4.5 A, TJ=125°C
VGS = 2.5 V, ID = 4 A
VGS = 4.5 V, VDS = 5 V
VDS = 4.5 V, ID = 4.5 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
VDS = 10 V, ID = 4.5 A,
VGS = 4.5 V
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.67 A (Note
2)
20
14
V
mV/°C
1 µA
100 nA
-100
nA
0.4 0.85 1.5
-3
V
mV/°C
0.015 0.022
0.026 0.040
0.020 0.028
10
24
A
S
1600
380
200
pF
pF
pF
12 22
15 27
35 55
18 30
16.2 23
2.5
5.5
ns
ns
ns
ns
nC
nC
nC
0.67
0.65 1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the users board design. Both devices are assumed to be operating and sharing the dissipated heat energy equally.
156OC/W on a minimum mountingpad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FD8305N Rev. C


Part Number FDR8305N
Description Dual N-Channel 2.5V Specified PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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