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FDR8321L - P-Channel MOSFET

Description

This device is designed for configuration as a load switch and is particularly suited for Power Management in portable battery powered electronic equipment.

Designed to operate from 2.5V to 8V input and supply up to 2.9A.

Features

  • a small N-Channel MOSFET (Q1) together with a large P-Channel power MOSFET (Q2) in a single SuperSOTTM-8 package. Features VDROP = 0.2V @ VIN= 5V, IL= 2.9A. RDS(ON) = 0.070 Ω VDROP = 0.2V @ VIN= 2.5V, IL= 2A. RDS(ON) = 0.105 Ω. VON/OFF Zener protection for ESD ruggedness (>6KV Human Body Model). High density cell design for extremely low on-resistance. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 VOUT,C1,CO 5 6 7 8 Q2 4 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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August 2000 FDR8321L P-Channel MOSFET With Gate Driver For Load Switch Application General Description This device is designed for configuration as a load switch and is particularly suited for Power Management in portable battery powered electronic equipment. Designed to operate from 2.5V to 8V input and supply up to 2.9A. The device features a small N-Channel MOSFET (Q1) together with a large P-Channel power MOSFET (Q2) in a single SuperSOTTM-8 package. Features VDROP = 0.2V @ VIN= 5V, IL= 2.9A. RDS(ON) = 0.070 Ω VDROP = 0.2V @ VIN= 2.5V, IL= 2A. RDS(ON) = 0.105 Ω. VON/OFF Zener protection for ESD ruggedness (>6KV Human Body Model). High density cell design for extremely low on-resistance.
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