FDR840P
Overview
This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
- -10 A, -20 V. RDS(ON) = 0.011 Ω @ VGS = -4.5 V RDS(ON) = 0.016 Ω @ VGS = -2.5 V
- Fast switching speed.
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability.
