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FDR840P - P-Channel MOSFET

General Description

This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process.

12V).

Key Features

  • 10 A,.
  • 20 V. RDS(ON) = 0.011 Ω @ VGS =.
  • 4.5 V RDS(ON) = 0.016 Ω @ VGS =.
  • 2.5 V.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDR840P April 2000 PRELIMINARY FDR840P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –10 A, –20 V. RDS(ON) = 0.011 Ω @ VGS = –4.5 V RDS(ON) = 0.016 Ω @ VGS = –2.5 V • Fast switching speed. • High performance trench technology for extremely low RDS(ON) • High power and current handling capability.