FDR838P - P-Channel MOSFET

Fairchild Semiconductor

FDR838P Datasheet Preview — Preview of FDR838P PDF

Datasheet Details

Part number	FDR838P
Manufacturer	Fairchild ↗ Semiconductor
File Size	204.53 KB
Description	P-Channel MOSFET
Datasheet	FDR838P_FairchildSemiconductor.pdf

FDR838P Product details

Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

-8 A, -20 V. RDS(ON) = 0.017 Ω @ VGS = -4.5 V RDS(ON) = 0.024 Ω @ VGS = -2.5 V Low gate charge (30nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8.

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Published: Mar 30, 2005 |