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FDR8308P - P-Channel MOSFET

Description

The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.

Features

  • -3.2 A, -20 V. RDS(ON) = 0.050 Ω @ VGS = -4.5 V, RDS(ON) = 0.070 Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-8 package: small footprint (40% less than SO-8); low profile(1mmthick); maximum power comparable to SO-8. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 P 08 83 5 6 S2 7 8 4 3 2 1 G2 pin 1 SuperSOT -8 TM G1 S1 Absolute Maximum Ratings Symbol Parameter TA = 25oC unless otherwis.

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Datasheet Details

Part number FDR8308P
Manufacturer Fairchild Semiconductor
File Size 268.27 KB
Description P-Channel MOSFET
Datasheet download datasheet FDR8308P Datasheet
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November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features -3.2 A, -20 V. RDS(ON) = 0.050 Ω @ VGS = -4.5 V, RDS(ON) = 0.070 Ω @ VGS = -2.5 V. Low gate charge (13nC typical).
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