Datasheet4U Logo Datasheet4U.com

FDR842P - P-Channel MOSFET

General Description

This P-Channel

1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management applications.

Key Features

  • 11 A,.
  • 12 V RDS(ON) = 9 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 12 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 16 mΩ @ VGS =.
  • 1.8 V.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDR6674A N-Channel MOSFET Analog Devices
FDRW30S120J Diode Fuji
FDRW35S60L Ultrafast Rectifier INCHANGE
FDRW60C120J Diode Fuji

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDR840P P-Channel MOSFET
FDR844P P-Channel MOSFET
FDR8305N N-Channel MOSFET
FDR8308P P-Channel MOSFET
FDR8321L P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDR842P December 2001 FDR842P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –11 A, –12 V RDS(ON) = 9 mΩ @ VGS = –4.5 V RDS(ON) = 12 mΩ @ VGS = –2.5 V RDS(ON) = 16 mΩ @ VGS = –1.