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Fairchild Semiconductor Electronic Components Datasheet

FDR842P Datasheet

P-Channel 1.8V Specified PowerTrench MOSFET

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December 2001
FDR842P
P-Channel 1.8V Specified PowerTrenchMOSFET
General Description
This P-Channel –1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
Power management
Load switch
Battery protection
Features
–11 A, –12 V RDS(ON) = 9 m@ VGS = –4.5 V
RDS(ON) = 12 m@ VGS = –2.5 V
RDS(ON) = 16 m@ VGS = –1.8 V
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
S
D
D
S
G
D
SuperSOTTM -8
D
D
54
63
72
81
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDR842P
FDR842P
13’’
Ratings
–12
±8
–11
–50
1.8
1.0
0.9
–55 to +150
70
20
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDR842P Rev D (W)


Fairchild Semiconductor Electronic Components Datasheet

FDR842P Datasheet

P-Channel 1.8V Specified PowerTrench MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V,
ID = –250 µA
ID = –250 µA, Referenced to 25°C
VDS = –10 V,
VGS = 8 V,
VGS = –8 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS,
ID = –250 µA
ID = –250 µA, Referenced to 25°C
VGS = –4.5 V, ID = –11 A
VGS = –2.5 V, ID = –9.5 A
VGS = –1.8 V, ID = –7.5 A
VGS= – 4.5 V, ID = –11 A, TJ=125°C
VGS = –4.5 V, VDS = –5 V
VDS = –5 V,
ID = –11 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = –6 V,
f = 1.0 MHz
V GS = 0 V,
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = –6 V,
ID = –1 A,
VGS = –4.5 V, RGEN = 6
VDS = –6 V,
VGS = –4.5 V
ID = –11 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –1.5 A (Note 2)
–12
–0.4
–50
–4.4
–0.5
2.7
7
9
12
9
56
5350
2135
1386
17
20
201
161
57
7
16
–0.6
–1
100
–100
–1.5
9
12
16
12
30
35
322
258
80
–1.5
–1.2
V
mV/°C
µA
nA
nA
V
mV/°C
m
A
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 70°/W when
mounted on a 1in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
b) 125°/W when
mounted on a .04 in2
pad of 2 oz copper
c) 135°/W when mounted on a
minimum pad.
FDR842P Rev D (W)


Part Number FDR842P
Description P-Channel 1.8V Specified PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 5 Pages
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