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FDR842P - P-Channel MOSFET

Description

This P-Channel

1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management applications.

Features

  • 11 A,.
  • 12 V RDS(ON) = 9 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 12 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 16 mΩ @ VGS =.
  • 1.8 V.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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Datasheet Details

Part number FDR842P
Manufacturer Fairchild Semiconductor
File Size 141.79 KB
Description P-Channel MOSFET
Datasheet download datasheet FDR842P Datasheet
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Full PDF Text Transcription

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FDR842P December 2001 FDR842P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –11 A, –12 V RDS(ON) = 9 mΩ @ VGS = –4.5 V RDS(ON) = 12 mΩ @ VGS = –2.5 V RDS(ON) = 16 mΩ @ VGS = –1.
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