FDR836P Datasheet | Fairchild Semiconductor

April 1999 P-Channel 2.5V Specified MOSFET General Description SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed. Features - -6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 V RDS(ON) = 0.040 W @ VGS = -2.5 V - - High density cell design...