FDR836P - P-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: FDR836P
Manufacturer: Fairchild Semiconductor
File Size: 224.87 KB
Datasheet: FDR836P_FairchildSemiconductor.pdf
Description: P-Channel MOSFET

FDR836P Product details

Description

SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology..

Features

-6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 V RDS(ON) = 0.040 W @ VGS = -2.5 V.
High density cell design for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8. D S D S 5 6 G 4 3 2 1 7 8 SuperSOT -8 TM D D D Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless other.

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P-Channel MOSFET Fairchild Semiconductor

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FDR836P Stock/Price