CGHV27100 Datasheet - Cree

CGHV27100 GaN HEMT

RES, 10 OHM, +/- 1%, 1/16 W, 0603 CAP, 5.6 pF, +/- 0.25 pF, 0603, ATC CAP, 27 pF, +/-5%, 0603, ATC CAP, 10.0 pF, +/-5%, 0603, ATC CAP, 8.2 pF, +/-0.25 pF, 0603, ATC CAP, 470 pF, 5%, 100 V, 0603, X CAP, 33000 pF, 0805, 100 V, X7R CAP, 10 UF, 16 V, TANTALUM CAP, 27 pF, +/-5%, 250 V, 0805, ATC 600 F CA.

CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 - 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is input matched and supplied in a ceramic/ metal pill and flange packages. PNPa: CckGaHgVe2T7y1p0e0: F44a0n1d6C2GaHndV2474100106P1 Typical Performanc.

CGHV27100 Features

* 2.5 - 2.7 GHz Operation

* 18.0 dB Gain

* -37 dBc ACLR at 25 W PAVE

* 33 % Efficiency at 25 W PAVE

* High Degree of DPD Correction Can be Applied Rev 1.0

* May 2015 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings

CGHV27100-Cree.pdf