Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
τ
Thermal Resistance, Junction to Case3
Thermal Resistance, Junction to Case4
Case Operating Temperature5
RθJC
RθJC
TC
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3 Measured for the CGHV27100P
4 Measured for the CGHV27100F
5 See also, the Power Dissipation De-rating Curve on Page 5.
Electrical Characteristics (TC = 25˚C)
Rating
125
-10, +2
-65, +150
225
16
6
245
80
2.34
2.95
-40, +150
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C, PDISS = 48 W
85˚C, PDISS = 48 W
Characteristics
DC Characteristics1
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
–
Saturated Drain Current2
IDS 12
Drain-Source Breakdown Voltage
VBR 150
RF Characteristics5 (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted)
Saturated Output Power3,4
PSAT
–
-3.0
-2.7
14.4
–
135
-2.3
–
–
–
–
VDC VDS = 10 V, ID = 16 mA
VDC VDS = 50 V, ID = 500 mA
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 16 mA
W VDD = 50 V, IDQ = 500 mA
Pulsed Drain Efficiency3,4
η – 68 – % VDD = 50 V, IDQ = 500 mA, POUT = PSAT
Gain6
G – 18 – dB VDD = 50 V, IDQ = 500 mA, POUT = 44 dBm
WCDMA Linearity6
ACLR
–
-37
–
dBc VDD = 50 V, IDQ = 500 mA, POUT = 44 dBm
Drain Efficiency6
Output Mismatch Stress3
Dynamic Characteristics
η
VSWR
–
–
33 –
% VDD = 50 V, IDQ = 500 mA, POUT = 44 dBm
– 10 : 1 Y No damage at all phase angles, VDD = 50 V, IDQ =
500 mA, POUT = 100 W Pulsed
Input Capacitance7
CGS – 66 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance7
CDS – 8.7 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD – 0.47 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Pulse Width = 100 µs, Duty Cycle = 10%
4 PSAT is defined as IGS = 1.6 mA peak
5 Measured in CGHV27100-AMP
6 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V.
7 Includes package and internal matching components.
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV27100 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
