CGHV27100 hemt equivalent, gan hemt.
* 2.5 - 2.7 GHz Operation
* 18.0 dB Gain
* -37 dBc ACLR at 25 W PAVE
* 33 % Efficiency at 25 W PAVE
* High Degree of DPD Correction Can be Applie.
The transistor is input matched and supplied in a ceramic/ metal pill and flange packages.
PNPa: CckGaHgVe2T7y1p0e0: F.
RES, 10 OHM, +/- 1%, 1/16 W, 0603 CAP, 5.6 pF, +/- 0.25 pF, 0603, ATC CAP, 27 pF, +/-5%, 0603, ATC CAP, 10.0 pF, +/-5%, 0603, ATC CAP, 8.2 pF, +/-0.25 pF, 0603, ATC CAP, 470 pF, 5%, 100 V, 0603, X CAP, 33000 pF, 0805, 100 V, X7R CAP, 10 UF, 16 V, TAN.
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