CGHV27100 Overview
CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 - 2.7 GHz LTE, 4G Tele and BWA amplifier applications. The transistor is input matched and supplied in a ceramic/ metal pill and flange packages....
CGHV27100 Key Features
- 2.7 GHz Operation
- 18.0 dB Gain
- 37 dBc ACLR at 25 W PAVE
- 33 % Efficiency at 25 W PAVE
- High Degree of DPD Correction Can be Applied
- May 2015