CGHV27060MP
CGHV27060MP is GaN HEMT manufactured by Cree.
Features
- WCDMA
- 2.5
- 2.7 GHz Reference Design Amplifier
- 18 d B Gain at 14 W PAVE
- -35 d Bc ACLR at 14 W PAVE
- 33% Efficiency at 14 W PAVE
- High Degree of DPD Correction Can be Applied
Features
- Pulsed
- 16.5 d B Gain at Pulsed PSAT
- 70% Efficiency at Pulsed PSAT
- 85 W at Pulsed PSAT
Rev 2.0
- April 2019
Subject to change without notice. .cree./rf
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-to-Source Voltage
Storage Temperature
TSTG
Operating Junction Temperature
Maximum Forward Gate Current
IGMAX
Maximum Drain Current1
IDMAX
Soldering Temperature2
Thermal Resistance, Junction to Case3
RθJC
Thermal Resistance Pulsed 10%, 100 μs, Junction to Case Case Operating Temperature4
RθJC TC
Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at http://.cree./rf/document-library 3 Measured for the CGHV27060MP 4 See also, the Power Dissipation De-rating Curve on Page 7.
Electrical Characteristics (TC =...