CGHV27060MP Datasheet - Cree

CGHV27060MP GaN HEMT

CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a broadband device with no internal input or output match which allows for the agility to apply to a wide range of frequencies from UHF thru 2.7GHz. The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF, L Band or low S Band .

CGHV27060MP Features

* - WCDMA

* 2.5 - 2.7 GHz Reference Design Amplifier

* 18 dB Gain at 14 W PAVE

* -35 dBc ACLR at 14 W PAVE

* 33% Efficiency at 14 W PAVE

* High Degree of DPD Correction Can be Applied Features - Pulsed

* 16.5 dB Gain at Pulsed PSAT

* 70%

CGHV27060MP-Cree.pdf

CGHV27060MP Datasheet Preview — Preview of CGHV27060MP PDF

Datasheet Details

Part number:

CGHV27060MP

Manufacturer:

Cree

File Size:

915.00 KB

Description:

Gan hemt.

CGHV27060MP Distributor

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CGHV27060MP CGHV27060MP GaN HEMT Cree