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CGHV27060MP Datasheet Preview

CGHV27060MP Datasheet

GaN HEMT

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PRELIMINARY
CGHV27060MP
60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications
Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor
(HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a
broadband device with no internal input or output match which allows for the agility
to apply to a wide range of frequencies from UHF thru 2.7GHz. The CGHV27060MP
makes for an excellent transistor for pulsed applications at UHF, L Band or low S
Band (<2.7GHz). Additionally, the transistor is well suited for LTE micro basestation
amplifiers in the power class of 10 to 15W average power in high efficiency topologies
such as Class A/B, F or Doherty amplifiers.
PN: CGHV27060MP
Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Gain @ 41.5 dBm Avg POUT
18.25
18.5
18.25
ACLR @ 41.5 dBm Avg POUT
-34 -37 -38
Drain Efficiency @ 41.5 dBm Avg POUT
33
35
33
Note:
Measured in the CGHV27060MP-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V, IDS = 125 mA.
Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Gain
16.5
16.3
16.2
Output Power
84 82 79
Drain Efficiency
71 69 65
Note:
Measured in the CGHV27060MP-TB amplifier circuit, under pulse width 100 μs, 10% duty cycle, PIN = 33 dBm.
Units
dB
dBc
%
Units
dB
W
%
Features - WCDMA
• 2.5 - 2.7 GHz Reference Design Amplifier
• 18.5 dB Gain at 14 W PAVE
• -35 dBc ACLR at 14 W PAVE
• 35% Efficiency at 14 W PAVE
High Degree of DPD Correction Can be Applied
Features - Pulsed
• 16.5 dB Gain at Pulsed PSAT
• 70% Efficiency at Pulsed PSAT
• 80W at Pulsed PSAT
Subject to change without notice.
www.cree.com/rf
1




Cree

CGHV27060MP Datasheet Preview

CGHV27060MP Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-to-Source Voltage
VGS
Storage Temperature
TSTG
Operating Junction Temperature
TJ
Maximum Forward Gate Current
IGMAX
Maximum Drain Current1
IDMAX
Soldering Temperature2
TS
Thermal Resistance, Junction to Case3
RθJC
Thermal Resistance Pulsed 10%, 100 μs, Junction to Case
Case Operating Temperature4
RθJC
TC
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3 Measured for the CGHV27060MP
4 See also, the Power Dissipation De-rating Curve on Page 4.
Electrical Characteristics (TC = 25˚C)
Rating
150
-10, +2
-65, +150
225
10.4
6.3
245
2.6
1.95
-40, +90
Units
Volts
Volts
˚C
˚C
mA
A
˚C
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C, PDISS = 52 W
85˚C, PDISS = 62W, 100 μs/10%
CW
Characteristics
DC Characteristics1
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current2
IDS 8.4
Drain-Source Breakdown Voltage
VBR 150
RF Characteristics5 (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted)
Saturated Output Power3,4
PSAT
-3.0
-2.7
10.4
80
-2.3
VDC VDS = 10 V, ID = 10.4 mA
VDC VDS = 50 V, ID = 125 mA
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 10.4 mA
W VDD = 50 V, IDQ = 125 mA
Pulsed Drain Efficiency3,4
η – 70 – % VDD = 50 V, IDQ = 125 mA, POUT = PSAT
Gain3,4
G
16.5
dB VDD = 50 V, IDQ = 125 mA, POUT = PSAT
Gain6
G
18.5
dB VDD = 50 V, IDQ = 125 mA, POUT = 41.5 dBm
WCDMA Linearity6
ACLR
-35
dBc VDD = 50 V, IDQ = 125 mA, POUT = 41.5 dBm
Drain Efficiency6
Output Mismatch Stress3
Dynamic Characteristics
η
VSWR
34 –
% VDD = 50 V, IDQ = 125 mA, POUT = 41.5 dBm
– TBD Y No damage at all phase angles, VDD = 50 V, IDQ =
125 mA, POUT = 60 W Pulsed
Input Capacitance7
CGS 15.3 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance7
CDS – 4.7 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD – 0.5 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Pulse Width = 100 µs, Duty Cycle = 10%
4 PSAT is defined as IGS = 1.0 mA peak
5 Measured in CGHV27060MP-TB.
6 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V.
7 Includes package.
Copyright © 2015-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV27060MP Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGHV27060MP
Description GaN HEMT
Maker Cree
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