• Part: CGHV27060MP
  • Description: GaN HEMT
  • Manufacturer: Cree
  • Size: 915.00 KB
Download CGHV27060MP Datasheet PDF
Cree
CGHV27060MP
CGHV27060MP is GaN HEMT manufactured by Cree.
Features - WCDMA - 2.5 - 2.7 GHz Reference Design Amplifier - 18 d B Gain at 14 W PAVE - -35 d Bc ACLR at 14 W PAVE - 33% Efficiency at 14 W PAVE - High Degree of DPD Correction Can be Applied Features - Pulsed - 16.5 d B Gain at Pulsed PSAT - 70% Efficiency at Pulsed PSAT - 85 W at Pulsed PSAT Rev 2.0 - April 2019 Subject to change without notice. .cree./rf Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Drain-Source Voltage VDSS Gate-to-Source Voltage Storage Temperature TSTG Operating Junction Temperature Maximum Forward Gate Current IGMAX Maximum Drain Current1 IDMAX Soldering Temperature2 Thermal Resistance, Junction to Case3 RθJC Thermal Resistance Pulsed 10%, 100 μs, Junction to Case Case Operating Temperature4 RθJC TC Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at http://.cree./rf/document-library 3 Measured for the CGHV27060MP 4 See also, the Power Dissipation De-rating Curve on Page 7. Electrical Characteristics (TC =...