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CGHV27015S Datasheet Preview

CGHV27015S Datasheet

GaN HEMT

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CGHV27015S
15 W, DC - 6.0 GHz, 50 V, GaN HEMT
Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The
CGHV27015S GaN HEMT device is unmatched so it is suitable for power amplifier applications
from 10MHz through 6000 MHz, such as tactical communications, CATV, UAV data links, as
well as a driver stage amplifier for RADAR, EW, and SatCom devices. At a Vdd of 50 V, the device
provide 2.5W of average power or 15W of peak power. At a Vdd of 28V, the device provides 1S
of average power and 7W of peak power. The transistor is available in a 3mm x 4mm, surface
mount,
duPaalc-fklaaPtg-Ne:TCyGpHe:V32x740D1F5NS
no-lead (DFN) package.
Typical Performance 2.4-2.7 GHz (TC = 25˚C) , 50 V
Parameter
2.4 GHz
Small Signal Gain
23
Adjacent Channel Power @ POUT = 2.5 W
Drain Efficiency @ POUT = 2.5 W
Input Return Loss
-36.7
35.9
-9.312
2.5 GHz
22
-40.7
33.5
-9.6
Note:
Measured in the CGHV27015S-AMP1 application circuit.
Under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH.
2.6 GHz
21.7
-42.4
30.4
-8.6
2.7 GHz
21.2
-42.5
30.2
-7.8
Units
dB
dBc
%
dB
Features for 50 V in CGHV27015S-AMP1
2.4 - 2.7 GHz Operation
15 W Typical Output Power
21 dB Gain at 2.5 W PAVE
-38 dBc ACLR at 2.5 W PAVE
32% efficiency at 2.5 W PAVE
High degree of APD and DPD correction can be applied
Subject to change without notice.
www.cree.com/rf
1




Cree

CGHV27015S Datasheet Preview

CGHV27015S Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Notes
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Case Operating Temperature3
Thermal Resistance, Junction to Case4
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
TC
RθJC
125
-10, +2
-65, +150
225
2
0.9
245
-40, +150
11.1
Volts
Volts
˚C
˚C
mA
A
˚C
˚C
˚C/W
25˚C
25˚C
25˚C
25˚C
85˚C
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/rf/document-library
3 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal resistance. See also, the Power
Dissipation De-rating Curve on page 7.
4 Measured for the CGHV27015S at PDISS = 5 W
5 The RTH for Cree’s demonstration amplifier, CGHV27015S-AMP1, with 31 x 0.011 via holes designed on a 20 mil thick Rogers 4350 PCB, is 3.9°C. The total
RTH from the heat sink to the junction is 11.1°C + 3.9°C = 15°C/W.
Electrical Characteristics (TC = 25˚C)
Characteristics
DC Characteristics1
Symbol
Min.
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current
IDS 1.48
Drain-Source Breakdown Voltage
V(BR)DSS
150
RF Characteristics2,3 (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted)
Gain
G–
WCDMA Linerarity4
ACLR
Drain Efficiency4
η
Typ.
-3.0
-2.6
1.78
21.2
-42.5
30.2
Max.
-2.3
-
-
Units
VDC
VDC
A
VDC
dB
dBc
%
Output Mismatch Stress
VSWR - 10 : 1 -
Y
Dynamic Characteristics
Input Capacitance5
CGS 3.15 pF
Output Capacitance5
CDS 1.06 pF
Feedback Capacitance
CGD 0.058 pF
Notes:
1 Measured on wafer prior to packaging
2 Scaled from PCM data
3 Measured in Cree’s production test fixture. This fixture is designed for high volume test at 2.7 GHz
4 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF
5 Includes package and internal matching components
Conditions
VDS = 10 V, ID = 2 mA
VDS = 50 V, ID = 60 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 2 mA
VDD = 50 V, IDQ = 60 mA, POUT = 34 dBm
VDD = 50 V, IDQ = 60 mA, POUT = 34 dBm
VDD = 50 V, IDQ = 60 mA, POUT = 34 dBm
No damage at all phase angles,
VDD = 50 V, IDQ = 60 mA, POUT = 34 dBm
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV27015S Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGHV27015S
Description GaN HEMT
Maker Cree
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