CGHV27015S Datasheet | Cree

Features for 50 V in CGHV27015S-AMP1 - 2.4 - 2.7 GHz Operation - 15 W Typical Output Power - 21 d B Gain at 2.5 W PAVE - -38 d Bc ACLR at 2.5 W PAVE - 32% efficiency at 2.5 W PAVE - High degree of APD and DPD correction can be applied Rev 2.0 - May 2015 Subject to change without notice. .cree./rf Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Notes Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Case Operating Temperature3 Thermal Resistance, Junction to Case4 VDSS VGS TSTG TJ IGMAX IDMAX TS TC RθJC 125 -10, +2 -65, +150 225 2 0.9 245 -40, +150 Volts Volts ˚C ˚C m A A ˚C ˚C ˚C/W 25˚C 25˚C 25˚C 25˚C 85˚C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at .cree./rf/document-library 3 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal resistance. See also, the Power Dissipation De-rating Curve on page 7. 4 Measured for the CGHV27015S at PDISS = 5 W 5 The RTH for Cree’s demonstration amplifier, CGHV27015S-AMP1, with 31 x 0.011 via holes designed on a 20 mil thick Rogers 4350 PCB, is 3.9°C. The total RTH from the heat sink to the junction is 11.1°C + 3.9°C = 15°C/W. Electrical Characteristics (TC = 25˚C) Characteristics DC Characteristics1 Symbol Min. Gate Threshold Voltage VGS(th) -3.8 Gate Quiescent...