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CGHV27030S Datasheet Preview

CGHV27030S Datasheet

GaN HEMT

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CGHV27030S
30 W, DC - 6.0 GHz, GaN HEMT
The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT)
which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN
HEMT devices are ideal for telecommunications applications with frequencies of 700-960
MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V
and 28 V operations. The CGHV27030S is also ideal for
operating from 20-2500 MHz, including land mobile
tactical communications applications
radios. Additional applications include
L-Band PackaPgNe:TCyGpHe:V32x740D3F0NS
RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a
3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.
Typical Performance 2.5-2.7 GHz (TC = 25˚C) , 50 V
Parameter
2.5 GHz
Small Signal Gain
22.5
2.6 GHz
22.0
2.7 GHz
21.4
Units
dB
Adjacent Channel Power @ POUT =5 W
-34.5
-35.0
-34.0
dBc
Drain Efficiency @ POUT = 5 W
28.5
29.5
30.0
%
Input Return Loss
8.5 14 14 dB
Note:
Measured in the CGHV27030S-AMP1 application circuit, under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH.
Features for 50 V in CGHV27030S-AMP1
2.5 - 2.7 GHz Operation
30 W Typical Output Power
20 dB Gain at 5 W PAVE
-34 dBc ACLR at 5 W PAVE
30% efficiency at 5 W PAVE
High degree of APD and DPD correction can be applied
Listing of Available Hardware Application Circuits / Demonstration Circuits
Application Circuit
CGHV27030S-AMP1
CGHV27030S-AMP2
CGHV27030S-AMP3
CGHV27030S-AMP4
CGHV27030S-AMP5
Operating Frequency
2.5 - 2.7 GHz
2.5 - 2.7 GHz
1.8 - 2.2 GHz
1.8 - 2.2 GHz
1.2 - 1.4 GHz
Amplifier Class
Class A/B
Class A/B
Class A/B
Class A/B
Class A/B
Subject to change without notice.
www.cree.com/RF
Operating Voltage
50 V
28 V
28 V
50 V
50 V
1




CREE

CGHV27030S Datasheet Preview

CGHV27030S Datasheet

GaN HEMT

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Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Units
Notes
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Case Operating Temperature3
Thermal Resistance, Junction to Case4
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
TC
RθJC
125
-10, +2
-65, +150
225
4
1.5
245
-40, +150
6.18
Volts
Volts
˚C
˚C
mA
A
˚C
˚C
˚C/W
25˚C
25˚C
25˚C
25˚C
85˚C
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/rf/document-library
3 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal
resistance. See also, the Power Dissipation De-rating Curve on page 23.
4 Measured for the CGHV27030S at PDISS = 12 W
5 The RTH for Cree’s demonstration amplifier, CGHV27030S-AMP1, with 33 x 0.011 via holes designed on a 20 mil thick Rogers 4350 PCB, is 3.9°C. The total
RTH from the heat sink to the junction is 6.18°C + 3.9°C = 10.08°C/W.
Electrical Characteristics (TC = 25˚C)
Characteristics
DC Characteristics1
Symbol
Min.
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current
IDS 3.0
Drain-Source Breakdown Voltage
V(BR)DSS
150
RF Characteristics2,3 (TC = 25˚C, F0 = 2.65 GHz unless otherwise noted)
Gain
G 20
Output Power4
Drain Efficiency4
POUT
η
44.5
64
Typ.
-3.0
-2.7
3.6
23
45
73
Max.
-2.3
-
-
Output Mismatch Stress4
VSWR - 10 : 1 -
Dynamic Characteristics
Input Capacitance5
CGS 5.38
Output Capacitance5
CDS 1.18
Feedback Capacitance
CGD 0.12
Notes:
1 Measured on wafer prior to packaging
2 Scaled from PCM data
3 Measured in Cree’s production test fixture. This fixture is designed for high volume test at 2.65 GHz
4 Un-modulated Pulsed Signal 100 μs, 10% duty cycle
5 Includes package parasitics.
Units
Conditions
VDC VDS = 10 V, ID = 4 mA
VDC VDS = 50 V, ID = 0.13 mA
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 4 mA
dB
dBm
%
Y
VDD = 50 V, IDQ = 0.13 A, PIN = 10 dBm
VDD = 50 V, IDQ = 0.13 A, PIN = 28 dBm
VDD = 50 V, IDQ = 0.13 A, PIN = 28 dBm
No damage at all phase angles,
VDD = 50 V, IDQ = 0.13 A, PIN = 28 dBm
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Copyright © 2013 - 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV27030S Rev 5.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGHV27030S
Description GaN HEMT
Maker CREE
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