CGHV27030S Description
CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. applications operating The from 20-25P0a0ckaPgNe :TyCpGeH:V32x740D30FSN MHz, including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR.
CGHV27030S Key Features
- 2.7 GHz Operation
- 30 W Typical Output Power
- 21 dB Gain at 5 W PAVE
- 36 dBc ACLR at 5 W PAVE
- 32% efficiency at 5 W PAVE
- High degree of APD and DPD correction can be applied
- 2.7 GHz 2.5
- 2.7 GHz 1.8
- 2.2 GHz 1.8
- 2.2 GHz 1.2