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CGHV27030S - GaN HEMT

Description

RES, 22.6, OHM, +/-1%, 1/16W, 0603 CAP, 3.3 pF, ±0.1 pF, 0603, ATC CAP, 0.7 pF, ±0.05 pF, 0603, ATC CAP, 8.2 pF, ±0.25 pF, 0603, ATC CAP, 470 pF, 5%, 100 V, 0603 CAP, 33000 pF, 0805, 100 V, 0603, X7R CAP, 1.0 UF, 100 V, 10%, X7R, 1210 CAP, 10 UF 16 V TANTALUM Qty 2 1 3 3 2 2 1 1 CAP, 33 UF, 20%, G

Features

  • for 50 V in CGHV27030S-TB1.
  • 2.5 - 2.7 GHz Operation.
  • 30 W Typical Output Power.
  • 21 dB Gain at 5 W PAVE.
  • -36 dBc ACLR at 5 W PAVE.
  • 32% efficiency at 5 W PAVE.
  • High degree of APD and DPD correction can be applied Listing of Available Hardware.

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Full PDF Text Transcription

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CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devicesare ideal for telecommunications applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V CGHV27030S is also ideal for tactical communications and 28 V operations. applications operating The from 20-25P0a0ckaPgNe :TyCpGeH:V32x740D30FSN MHz, including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.
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