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CGHV27200 Datasheet Preview

CGHV27200 Datasheet

GaN HEMT

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PRELIMINARY
CGHV27200
200 W, 2500-2700 MHz, GaN HEMT for LTE
Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and
wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-
2.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a
ceramic/metal flange package.
PPNa:ckCaGgHeVT2y7p2e0:04F4a0n1d62CGanHdV2474200106P1
Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Units
Gain @ 47 dBm
15.0
16.0
16.0
dB
ACLR @ 47 dBm
-36.5
-37.5
-37.0
dBc
Drain Efficiency @ 47 dBm
29.0
28.5
29.0
%
Note:
Measured in the CGHV27200-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Features
• 2.5 - 2.7 GHz Operation
• 16 dB Gain
• -37 dBc ACLR at 50 W PAVE
• 29 % Efficiency at 50 W PAVE
• High Degree of DPD Correction Can be Applied
Subject to change without notice.
www.cree.com/rf
1




Cree

CGHV27200 Datasheet Preview

CGHV27200 Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
125
-10, +2
-65, +150
225
32
12
245
Screw Torque
τ 80
Thermal Resistance, Junction to Case3
Thermal Resistance, Junction to Case4
Case Operating Temperature5
RθJC
RθJC
TC
1.22
1.54
-40, +150
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3 Measured for the CGHV27200P
4 Measured for the CGHV27200F
5 See also, the Power Dissipation De-rating Curve on Page 6
Electrical Characteristics (TC = 25˚C)
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C/W
˚C
Units
25˚C
25˚C
25˚C
25˚C
85˚C, PDISS = 96 W
85˚C, PDISS = 96 W
30 seconds
Characteristics
DC Characteristics1
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC VDS = 10 V, ID = 32 mA
Gate Quiescent Voltage
VGS(Q)
-2.7
VDC VDS = 50 V, ID = 1.0 A
Saturated Drain Current2
IDS
24 28.8
A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage VBR 125
RF Characteristics5 (TC = 25˚C, F0 = 2.7 GHz unless otherwise noted)
Saturated Output Power3,4
PSAT 300
VDC VGS = -8 V, ID = 32 mA
W VDD = 50 V, IDQ = 1.0 A
Pulsed Drain Efficiency3
η 62 – % VDD = 50 V, IDQ = 1.0 A, POUT = PSAT
Gain6
G
15.25
dB VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm
WCDMA Linearity6
ACLR
-37
dBc
VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm
Drain Efficiency6
Output Mismatch Stress3
Dynamic Characteristics
η
VSWR
30.5
10 : 1
% VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm
Y
No damage at all phase angles, VDD =
50 V, IDQ = 1.0 A, POUT = 200 W Pulsed
Input Capacitance7
CGS – 97 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance7
CDS 13.4 pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD 0.94 pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Pulse Width = 100 µS, Duty Cycle = 10%
4 PSAT is defined as IG = 3 mA peak.
5 Measured in CGHV27200-TB.
6 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
7 Includes package and internal matching components.
Copyright © 2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc.
2 CGHV27200 Rev 0.1 PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGHV27200
Description GaN HEMT
Maker Cree
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