Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature3
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
τ
Thermal Resistance, Junction to Case3
RθJC
Thermal Resistance, Junction to Case4
RθJC
Case Operating Temperature5
TC
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3 Measured for the CGHV22200P
4 Measured for the CGHV22200F
5 See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (TC = 25˚C)
Rating
125
-10, +2
-65, +150
225
32
12
245
80
1.22
1.54
-40, +150
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C, PDISS = 96 W
85˚C, PDISS = 96 W
Characteristics
DC Characteristics1
Symbol
Min.
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
–
Saturated Drain Current2
IDS 24
Drain-Source Breakdown Voltage
VBR 150
RF Characteristics3 (TC = 25˚C, F0 = 2.17 GHz unless otherwise noted)
Saturated Output Power3,4
PSAT
–
Pulsed Drain Efficiency3
η–
Gain6
G–
WCDMA Linearity6
ACLR
–
Drain Efficiency6
η–
Typ.
-3.0
-2.7
28.8
–
240
65
18.0
-36.7
34.5
Max.
-2.3
–
–
–
–
–
–
–
–
Units
VDC
VDC
A
VDC
W
%
dB
dBc
%
Output Mismatch Stress3
VSWR
–
– 10 : 1 Y
Dynamic Characteristics
Input Capacitance7
CGS – 97 –
Output Capacitance7
CDS – 13.4 –
Feedback Capacitance
CGD – 0.94 –
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Pulse Width = 100 µS, Duty Cycle = 10%
4 PSAT is defined as IG = 3 mA peak.
5 Measured in CGHV22200-AMP
6 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
7 Includes package and internal matching components.
pF
pF
pF
Conditions
VDS = 10 V, ID = 32 mA
VDS = 50 V, ID = 1.0 A
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 32 mA
VDD = 50 V, IDQ = 1.0 A
VDD = 50 V, IDQ = 1.0 A, POUT = PSAT
VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm
VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm
VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm
No damage at all phase angles, VDD = 50 V, IDQ
= 1.0 A, POUT = 200 W Pulsed
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV22200 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
