CGHV22200 hemt equivalent, gan hemt.
* 1.8 - 2.2 GHz Operation
* 18 dB Gain
* -35 dBc ACLR at 50 W PAVE
* 31-35 % Efficiency at 50 W PAVE
* High Degree of DPD Correction Can be Appli.
The transistor is input matched and supplied in a ceramic/ metal flange package.
PNPa: CckGaHgVe2T2y2p0e0: F44a0n1d6C2.
RES, 1/16 W, 0603, 1%, 10.0 OHMS RES, 1/16 W, 0603, 1%, 5.1 OHMS CAP, 470 pF, 5%, 100 V, 0603, X CAP, 1.0 UF, 100 V, 10%, x7R, 121 CAP, 100 UF, 20%, 160 V, ELEC CAP, 10 UF, 16 V, TANTALUM, 2312 CAP, 10.0 pF, 5.
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