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CGHV22200 Datasheet Preview

CGHV22200 Datasheet

GaN HEMT

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CGHV22200
200 W, 1800-2200 MHz, GaN HEMT for LTE
Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
is designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV22200F ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and BWA
amplifier applications. The transistor is input matched and supplied in a ceramic/
metal flange package.
PNPa: CckGaHgVe2T2y2p0e0: F44a0n1d6C2GaHndV2424200106P1
Typical Performance Over 1.8 - 2.2 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.8 GHz
2.0 GHz
2.2 GHz
Gain @ 47 dBm
16.6
19.2
18.1
ACLR @ 47 dBm
-37.4
-37.4
-35.6
Drain Efficiency @ 47 dBm
31.5
31.9
34.8
Note:
Measured in the CGHV22200-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF. IDS = 1.0 A
Units
dB
dBc
%
Features
• 1.8 - 2.2 GHz Operation
• 18 dB Gain
• -35 dBc ACLR at 50 W PAVE
• 31-35 % Efficiency at 50 W PAVE
• High Degree of DPD Correction Can be Applied
Subject to change without notice.
www.cree.com/rf
1




Cree

CGHV22200 Datasheet Preview

CGHV22200 Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature3
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
τ
Thermal Resistance, Junction to Case3
RθJC
Thermal Resistance, Junction to Case4
RθJC
Case Operating Temperature5
TC
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3 Measured for the CGHV22200P
4 Measured for the CGHV22200F
5 See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (TC = 25˚C)
Rating
125
-10, +2
-65, +150
225
32
12
245
80
1.22
1.54
-40, +150
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C, PDISS = 96 W
85˚C, PDISS = 96 W
Characteristics
DC Characteristics1
Symbol
Min.
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current2
IDS 24
Drain-Source Breakdown Voltage
VBR 150
RF Characteristics3 (TC = 25˚C, F0 = 2.17 GHz unless otherwise noted)
Saturated Output Power3,4
PSAT
Pulsed Drain Efficiency3
η
Gain6
G–
WCDMA Linearity6
ACLR
Drain Efficiency6
η
Typ.
-3.0
-2.7
28.8
240
65
18.0
-36.7
34.5
Max.
-2.3
Units
VDC
VDC
A
VDC
W
%
dB
dBc
%
Output Mismatch Stress3
VSWR
10 : 1 Y
Dynamic Characteristics
Input Capacitance7
CGS 97
Output Capacitance7
CDS 13.4
Feedback Capacitance
CGD 0.94
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Pulse Width = 100 µS, Duty Cycle = 10%
4 PSAT is defined as IG = 3 mA peak.
5 Measured in CGHV22200-AMP
6 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
7 Includes package and internal matching components.
pF
pF
pF
Conditions
VDS = 10 V, ID = 32 mA
VDS = 50 V, ID = 1.0 A
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 32 mA
VDD = 50 V, IDQ = 1.0 A
VDD = 50 V, IDQ = 1.0 A, POUT = PSAT
VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm
VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm
VDD = 50 V, IDQ = 1.0 A, POUT = 47 dBm
No damage at all phase angles, VDD = 50 V, IDQ
= 1.0 A, POUT = 200 W Pulsed
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV22200 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGHV22200
Description GaN HEMT
Maker Cree
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