CGHV22100 Datasheet Text
CGHV22100
100 W, 1800-2200 MHz, GaN HEMT for LTE
Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8
- 2.2 GHz LTE, 4G Tele and BWA amplifier applications. The transistor is input matched and supplied in a ceramic/ metal flange package.
PNPa: CckGaHgVe2T2y1p0e0: F44a0n1d6C2GaHndV2424100106P1
Typical Performance Over 1.8
- 2.2 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.8 GHz
2.0 GHz
2.2 GHz
Gain @ 44 dBm
18.7
20.7
22.0
ACLR @ 44 dBm
-37.8
-37.1
-35.1
Drain Efficiency @ 44 dBm
35.4
31.7
30.6
Note: Measured in the CGHV22100-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
Units dB dBc %
Features
- 1.8
- 2.2 GHz Operation
- 20 dB Gain
- -35 dBc ACLR at 25 W PAVE...