Datasheet4U Logo Datasheet4U.com

CGHV22100 - GaN HEMT

Description

RES, 1/16 W, 0603, 1%, 10.0 OHMS RES, 1/16 W, 0603, 1%, 5.1 OHMS CAP, 470 pF, 5%, 100 V, 0603, X CAP, 1.0 UF, 100 V, 10%, x7R, 121 CAP, 100 UF, 20%, 160 V, ELEC CAP, 10 UF, 16 V, TANTALUM, 2312 CAP, 10.0 pF, 5%, 0603, ATC CAP, 33000 pF, 0805, 100 V, X7R CAP, 10 pF, 5%, 250 V, 0805, A CONN, N, FEM, W

Features

  • 1.8 - 2.2 GHz Operation.
  • 20 dB Gain.
  • -35 dBc ACLR at 25 W PAVE.
  • 31-35 % Efficiency at 25 W PAVE.
  • High Degree of DPD Correction Can be Applied Rev 2.0.
  • May 2015 Subject to change without notice. www. cree. com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature3 Maximum Forward Gate Current Ma.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CGHV27015S GaN HEMT Wolfspeed
CGHV27030S GaN HEMT MACOM
CGHV14250 GaN HEMT Wolfspeed
CGHV14500F GaN HEMT MACOM
CGHV14800 GaN HEMT Wolfspeed

Other Datasheets by Cree (now Wolfspeed)

Part Number Description
CGHV22200 GaN HEMT
CGHV27015S GaN HEMT
CGHV27030S GaN HEMT
CGHV27060MP GaN HEMT
CGHV27100 GaN HEMT

Full PDF Text Transcription

Click to expand full text
CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is input matched and supplied in a ceramic/ metal flange package. PNPa: CckGaHgVe2T2y1p0e0: F44a0n1d6C2GaHndV2424100106P1 Typical Performance Over 1.8 - 2.2 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.8 GHz 2.0 GHz 2.2 GHz Gain @ 44 dBm 18.7 20.7 22.0 ACLR @ 44 dBm -37.8 -37.1 -35.1 Drain Efficiency @ 44 dBm 35.4 31.7 30.
Published: |