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CGHV22100 Datasheet, Cree

CGHV22100 hemt equivalent, gan hemt.

CGHV22100 Avg. rating / M : 1.0 rating-11

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CGHV22100 Datasheet

Features and benefits


* 1.8 - 2.2 GHz Operation
* 20 dB Gain
* -35 dBc ACLR at 25 W PAVE
* 31-35 % Efficiency at 25 W PAVE
* High Degree of DPD Correction Can be Appli.

Application

The transistor is input matched and supplied in a ceramic/ metal flange package. PNPa: CckGaHgVe2T2y1p0e0: F44a0n1d6C2.

Description

RES, 1/16 W, 0603, 1%, 10.0 OHMS RES, 1/16 W, 0603, 1%, 5.1 OHMS CAP, 470 pF, 5%, 100 V, 0603, X CAP, 1.0 UF, 100 V, 10%, x7R, 121 CAP, 100 UF, 20%, 160 V, ELEC CAP, 10 UF, 16 V, TANTALUM, 2312 CAP, 10.0 pF, 5%, 0603, ATC CAP, 33000 pF, 0805, 100 V, .

Image gallery

CGHV22100 Page 1 CGHV22100 Page 2 CGHV22100 Page 3

TAGS

CGHV22100
GaN
HEMT
CGHV22200
CGHV27015S
CGHV27030S
Cree

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