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CGHV22100 Datasheet Preview

CGHV22100 Datasheet

GaN HEMT

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CGHV22100
100 W, 1800-2200 MHz, GaN HEMT for LTE
Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
is designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV22100 ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and BWA
amplifier applications. The transistor is input matched and supplied in a ceramic/
metal flange package.
PNPa: CckGaHgVe2T2y1p0e0: F44a0n1d6C2GaHndV2424100106P1
Typical Performance Over 1.8 - 2.2 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.8 GHz
2.0 GHz
2.2 GHz
Gain @ 44 dBm
18.7
20.7
22.0
ACLR @ 44 dBm
-37.8
-37.1
-35.1
Drain Efficiency @ 44 dBm
35.4
31.7
30.6
Note:
Measured in the CGHV22100-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Units
dB
dBc
%
Features
• 1.8 - 2.2 GHz Operation
• 20 dB Gain
• -35 dBc ACLR at 25 W PAVE
• 31-35 % Efficiency at 25 W PAVE
• High Degree of DPD Correction Can be Applied
Subject to change without notice.
www.cree.com/rf
1




Cree

CGHV22100 Datasheet Preview

CGHV22100 Datasheet

GaN HEMT

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Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature3
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
τ
125
-10, +2
-65, +150
225
16
6
245
80
Thermal Resistance, Junction to Case3
RθJC 2.34
Thermal Resistance, Junction to Case4
RθJC 2.95
Case Operating Temperature5
TC -40, +150
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3 Measured for the CGHV22100P
4 Measured for the CGHV22100F
5 See also, the Power Dissipation De-rating Curve on Page 4.
Electrical Characteristics (TC = 25˚C)
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C, PDISS = 48 W
85˚C, PDISS = 48 W
Characteristics
DC Characteristics1
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC VDS = 10 V, ID = 16 mA
Gate Quiescent Voltage
VGS(Q)
-2.7
VDC VDS = 50 V, ID = 0.5 A
Saturated Drain Current2
IDS
12 14.4
A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR 150
– VDC VGS = -8 V, ID = 16 mA
RF Characteristics3 (TC = 25˚C, F0 = 2.17 GHz unless otherwise noted)
Gain4
G
19.75
22
dB VDD = 50 V, IDQ = 0.5 A, POUT = 44 dBm
WCDMA Linearity4
ACLR
-35 -31 dBc VDD = 50 V, IDQ = 0.5 A, POUT = 44 dBm
Drain Efficiency4
Output Mismatch Stress
Dynamic Characteristics
η
VSWR
26.5
30.5
10 : 1
% VDD = 50 V, IDQ = 0.5 A, POUT = 44 dBm
Y No damage at all phase angles, VDD = 50 V, IDQ
= 0.5 A, POUT = 100 W Pulsed
Input Capacitance5
CGS 66 pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance5
CDS 8.7 pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD 0.47 pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV22100-AMP
4 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
5 Includes package and internal matching components.
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV22100 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGHV22100
Description GaN HEMT
Maker Cree
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