* Easy power control
* Integrated ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Internally matched for e.

at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class.

250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit. Test signal f VDS PL(1dB) Gp D (GHz.

BLF6G13LS-250PG

BLF6G13L-250P

BLF6G10-200RN

BLF6G10-45

BLF6G10L-40BRN

BLF6G10LS-135R

BLF6G10LS-200

BLF6G10LS-200R

BLF6G10LS-200RN

BLF6G10S-45

BLF6G15L-500H

BLF6G15LS-250PBRN

BLF6G15LS-500H

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