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BLF6G15LS-250PBRN
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Mode of operation
f
VDS
PL(AV)
Gp
D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
1476 to 1511 28
60
18.5 34.0
ACPR (dBc) 30 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier. Carrier spacing 5 MHz.
1.
BLF6G15LS-250PBRN Datasheet
