Datasheet4U Logo Datasheet4U.com

BLF6G20-180RN - Power LDMOS transistor

Description

180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a class-AB production test circuit.

Features

  • Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA:.
  • Average output power = 40 W.
  • Power gain = 17.2 dB.
  • Efficiency = 27 %.
  • IMD3 = 41 dBc.
  • ACPR = 38 dBc.
  • Easy power control.
  • Integrated ESD protection.
  • Enhanced ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (1800 MHz to 2000 MHz).
  • Internally matched for ease of use.

📥 Download Datasheet

Datasheet Details

Part number BLF6G20-180RN
Manufacturer Ampleon
File Size 1.09 MB
Description Power LDMOS transistor
Datasheet download datasheet BLF6G20-180RN Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLF6G20-180RN Power LDMOS Transistor NXP
BLF6G20-180P UHF power LDMOS transistor NXP
BLF6G20-180PN Power LDMOS transistor NXP Semiconductors
BLF6G20-110 Power LDMOS transistor NXP Semiconductors
BLF6G20-230PRN Power LDMOS transistor NXP Semiconductors

Other Datasheets by Ampleon

Part Number Description
BLF6G20-45 Power LDMOS transistor
BLF6G20LS-180RN Power LDMOS transistor
BLF6G20S-45 Power LDMOS transistor
BLF6G21-10G Power LDMOS transistor
BLF6G22-45 Power LDMOS transistor

Full PDF Text Transcription

Click to expand full text
BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 (MHz) (V) (W) (dB) (%) (dBc) 2-carrier WCDMA 1930 to 1990 30 40 17.2 27 38[1] ACPR (dBc) 41[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
Published: |