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BLF6G22-45 - Power LDMOS transistor

Description

45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Table 1.

RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 405 mA:.
  • Average output power = 2.5 W.
  • Power gain = 18.5 dB (typ).
  • Efficiency = 13 %.
  • ACPR = 49 dBc.
  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stabilit.

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Datasheet Details

Part number BLF6G22-45
Manufacturer Ampleon
File Size 307.36 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF6G22-45 Datasheet

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Full PDF Text Transcription

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BLF6G22-45 Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 2110 to 2170 28 2.5 18.5 13 ACPR (dBc) 49[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. 1.2 Features and benefits  Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 405 mA:  Average output power = 2.
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