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BLF6G22LS-40BN - Power LDMOS transistor

Description

40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Table 1.

RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 345 mA:.
  • Average output power = 2.5 W.
  • Power gain = 18.5 dB (typ).
  • Efficiency = 16 %.
  • ACPR = 50 dBc.
  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (2000 MHz to 2200 MHz).
  • Internally matched for ease of use.
  • Integra.

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Datasheet Details

Part number BLF6G22LS-40BN
Manufacturer Ampleon
File Size 1.06 MB
Description Power LDMOS transistor
Datasheet download datasheet BLF6G22LS-40BN Datasheet

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Full PDF Text Transcription

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BLF6G22LS-40BN Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 2110 to 2170 28 2.5 18.5 16 ACPR (dBc) 50[1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz 1.2 Features and benefits  Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 345 mA:  Average output power = 2.
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