BLF6G22L-40BN - Power LDMOS transistor

Description

40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Table 1.

RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

• Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 345 mA:.
• Average output power = 2.5 W.
• Power gain = 19 dB (typ).
• Efficiency = 16 %.
• ACPR = 50 dBc.
• Easy power control.
• Integrated ESD protection.
• Excellent ruggedness.
• High efficiency.
• Excellent thermal stability.
• Designed for broadband operation (2000 MHz to 2200 MHz).
• Internally matched for ease of use.
• Integrate.