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BLF6G22LS-40P - Power LDMOS transistor

Download the BLF6G22LS-40P datasheet PDF. This datasheet also covers the BLF6G22L-40P variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Lower output capacitance for improved performance in Doherty.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF6G22L-40P-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF6G22LS-40P
Manufacturer Ampleon
File Size 568.14 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF6G22LS-40P Datasheet

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Full PDF Text Transcription

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BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 410 28 13.5 19 30 30 [2] 1805 to 1880 [1] 410 28 5 20.3 18.3 34.9 [2] 1-carrier W-CDMA 2110 to 2170 410 28 15 19 32 37 [3] 1805 to 1880 [1] 410 28 5 20.5 18.0 42.3 [3] [1] The performance is tested on the Class AB demo board as depicted in Figure 11.
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