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BLF6G22L-40P; BLF6G22LS-40P
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV) Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170
410 28
13.5 19
30 30 [2]
1805 to 1880 [1] 410 28
5
20.3 18.3 34.9 [2]
1-carrier W-CDMA
2110 to 2170 410 28 15
19 32 37 [3]
1805 to 1880 [1] 410 28
5
20.5 18.0 42.3 [3]
[1] The performance is tested on the Class AB demo board as depicted in Figure 11.
BLF6G22L-40P Datasheet
