Datasheet4U Logo Datasheet4U.com

BLF6G20S-45 - Power LDMOS transistor

Download the BLF6G20S-45 datasheet PDF. This datasheet also covers the BLF6G20-45 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 360 mA:.
  • Average output power = 2.5 W.
  • Power gain = 19.2 dB (typ).
  • Efficiency = 14 %.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF6G20-45-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF6G20S-45
Manufacturer Ampleon
File Size 358.84 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF6G20S-45 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLF6G20-110 Power LDMOS transistor NXP Semiconductors
BLF6G20-180P UHF power LDMOS transistor NXP
BLF6G20-180PN Power LDMOS transistor NXP Semiconductors
BLF6G20-180RN Power LDMOS Transistor NXP
BLF6G20-230PRN Power LDMOS transistor NXP Semiconductors

Other Datasheets by Ampleon

Part Number Description
BLF6G20-180RN Power LDMOS transistor
BLF6G20-45 Power LDMOS transistor
BLF6G20LS-180RN Power LDMOS transistor
BLF6G21-10G Power LDMOS transistor
BLF6G22-45 Power LDMOS transistor

Full PDF Text Transcription

Click to expand full text
BLF6G20-45; BLF6G20S-45 Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 1805 to 1880 28 2.5 19.2 14 ACPR (dBc) 50[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
Published: |