40V/8A,RDS(ON)= 33mΩ@VGS=10V 40V/5A,RDS(ON)= 38mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Synchronous Rectif.

Pin Description ( SOP-8P ) AFN4286WS 40V N-Channel Enhancement Mode MOSFET Features 40V/8A,RDS(ON)= 33mΩ@VGS=10V 40V/5.

AFN4286WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

AFN4210W

AFN4214W

AFN4228W

AFN4240S

AFN4248W

AFN4048WS

AFN4056WS

AFN4058WS

AFN4062S

AFN4116WS

AFN4124WS

AFN4126S

AFN4134W

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