AFN4240S mosfet equivalent, n-channel enhancement mode mosfet.
40V/30A,RDS(ON)= 3.3mΩ@VGS=10V 40V/20A,RDS(ON)= 4.3mΩ@VGS=4.5V Super high density cell design for extremely low RDS
(ON)
TO-220-3L package design
Pin Description ( TO-22.
Features
40V/30A,RDS(ON)= 3.3mΩ@VGS=10V 40V/20A,RDS(ON)= 4.3mΩ@VGS=4.5V Super high density cell design for extremely l.
AFN4240S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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