AFN4214W mosfet equivalent, n-channel mosfet.
* 30V/9A,RDS(ON)=16mΩ@VGS=10V
* 30V/8A,RDS(ON)=18mΩ@VGS=4.5V
* Super high density cell design for extremely
low RDS (ON)
* SOP-8P package design
Applicat.
Pin Description ( SOP-8P )
AFN4214W
30V N-Channel Enhancement Mode MOSFET
Features
* 30V/9A,RDS(ON)=16mΩ@VGS=10V <.
AFN4214W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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