100V/15A,RDS(ON)=19mΩ@VGS=10V 100V/12A,RDS(ON)=23mΩ@VGS=7V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application DC/DC Primary Side.

Pin Description ( SOP-8P ) AFN4056WS 100V N-Channel Enhancement Mode MOSFET Features 100V/15A,RDS(ON)=19mΩ@VGS=10V 100.

AFN4056WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

AFN4058WS

AFN4048WS

AFN4062S

AFN4116WS

AFN4124WS

AFN4126S

AFN4134W

AFN4154WS

AFN4172WS

AFN4190S

AFN4210W

AFN4214W

AFN4228W

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