20V/ 15A,RDS(ON)=8.5mΩ@VGS=4.5V 20V/ 12A,RDS(ON)=11mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Synchronous Bu.

Pin Description ( SOP-8P ) AFN4116WS 20V N-Channel Enhancement Mode MOSFET Features 20V/ 15A,RDS(ON)=8.5mΩ@VGS=4.5V 20.

AFN4116WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

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