AFN4172WS mosfet equivalent, n-channel mosfet.
* 30V/15A,RDS(ON)=12mΩ@VGS=10V
* 30V/13A,RDS(ON)=15mΩ@VGS=4.5V
* Super high density cell design for extremely
low RDS (ON)
* SOP-8P package design
Applic.
Pin Description ( SOP-8P )
AFN4172WS
30V N-Channel Enhancement Mode MOSFET
Features
* 30V/15A,RDS(ON)=12mΩ@VGS=10V.
AFN4172WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.
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