20V/ 8A,RDS(ON)=14mΩ@VGS=4.5V 20V/ 6A,RDS(ON)=16mΩ@VGS=2.5V 20V/ 5A,RDS(ON)=20mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) SOP-8P package design .

Pin Description ( SOP-8P ) AFN4228W 20V N-Channel Enhancement Mode MOSFET Features 20V/ 8A,RDS(ON)=14mΩ@VGS=4.5V 20V/ .

AFN4228W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN4210W

AFN4214W

AFN4240S

AFN4248W

AFN4286WS

AFN4048WS

AFN4056WS

AFN4058WS

AFN4062S

AFN4116WS

AFN4124WS

AFN4126S

AFN4134W

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