AFN4210W mosfet equivalent, n-channel mosfet.
30V/6.8A,RDS(ON)=32mΩ@VGS=10V 30V/5.6A,RDS(ON)=40mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design
Application
Low Current DC/D.
Pin Description ( SOP-8P )
AFN4210W
30V N-Channel Enhancement Mode MOSFET
Features
30V/6.8A,RDS(ON)=32mΩ@VGS=10V 30V/5.
AFN4210W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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