20V/6.0A,RDS(ON)=28mΩ@VGS=4.5V 20V/5.0A,RDS(ON)=32mΩ@VGS=2.5V 20V/4.0A,RDS(ON)=42mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) SOP-8P package desi.

Pin Description ( SOP-8P ) AFN4248W 20V N-Channel Enhancement Mode MOSFET Features 20V/6.0A,RDS(ON)=28mΩ@VGS=4.5V 20V/.

AFN4248W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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