* 30V/4.0A,RDS(ON)=50mΩ@VGS=10V
* 30V/3.0A,RDS(ON)=56mΩ@VGS=4.5V
* 30V/2.5A,RDS(ON)=64mΩ@VGS=2.5V
* 30V/1.0A,RDS(ON)=76mΩ@VGS=1.8V
* Super high densit.

Pin Description ( DFN2X2-6L ) Features
* 30V/4.0A,RDS(ON)=50mΩ@VGS=10V
* 30V/3.0A,RDS(ON)=56mΩ@VGS=4.5V
* .

AFN2918W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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