z 20V/4.5A,RDS(ON)=38mΩ@VGS=4.5V z 20V/3.6A,RDS(ON)=48mΩ@VGS=2.5V z 20V/2.4A,RDS(ON)=68mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z DFN2X2-6L.

Pin Description ( DFN2X2-6L ) AFN2912W 20V N-Channel Enhancement Mode MOSFET Features z 20V/4.5A,RDS(ON)=38mΩ@VGS=4.5V.

AFN2912W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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