40V/20A,RDS(ON)= 22mΩ@VGS=10V 40V/12A,RDS(ON)= 40mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Backlight Inv.

Pin Description ( TO-252-2L ) AFN2604 40V N-Channel Enhancement Mode MOSFET Features 40V/20A,RDS(ON)= 22mΩ@VGS=10V 40V.

AFN2604, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

AFN2014

AFN2024S

AFN2302AS

AFN2304AS

AFN2306A

AFN2306AE

AFN2308A

AFN2312A

AFN2316A

AFN2318A

AFN2324A

AFN2324BA

AFN2326BS

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