150V/15A,RDS(ON)= 64mΩ@VGS=10V 150V/10A,RDS(ON)= 70mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin Description ( TO-252-.

Features 150V/15A,RDS(ON)= 64mΩ@VGS=10V 150V/10A,RDS(ON)= 70mΩ@VGS=6V Super high density cell design for extremely low.

AFN2515S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts