30V/1.8A,RDS(ON)=480mΩ@VGS=10V 30V/1.5A,RDS(ON)=580mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current .

Pin Description ( SOT-23 ) AFN2336BA 30V N-Channel Enhancement Mode MOSFET Features 30V/1.8A,RDS(ON)=480mΩ@VGS=10V 30V.

AFN2336BA, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other b.

AFN2336A

AFN2330

AFN2330A

AFN2302AS

AFN2304AS

AFN2306A

AFN2306AE

AFN2308A

AFN2312A

AFN2316A

AFN2318A

AFN2324A

AFN2324BA

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