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AFN2330 - N-Channel Enhancement Mode MOSFET

Download the AFN2330 datasheet PDF. This datasheet also covers the AFN2330-Alfa variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFN2330, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 90V/2.8A,RDS(ON)=190mΩ@VGS=10V 90V/2.0A,RDS(ON)=200mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN2330-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN2330
Manufacturer Alfa-MOS
File Size 546.06 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN2330 Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFN2330A N-Channel MOSFET
AFN2336A N-Channel MOSFET
AFN2336BA N-Channel MOSFET
AFN2302AS N-Channel MOSFET
AFN2304AS N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN2330, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-3L ) AFN2330 90V N-Channel Enhancement Mode MOSFET Features 90V/2.8A,RDS(ON)=190mΩ@VGS=10V 90V/2.0A,RDS(ON)=200mΩ@VGS=4.
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