90V/2.8A,RDS(ON)=200mΩ@VGS=10V 90V/2.0A,RDS(ON)=210mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current .

Pin Description ( SOT-23 ) AFN2330A 90V N-Channel Enhancement Mode MOSFET Features 90V/2.8A,RDS(ON)=200mΩ@VGS=10V 90V/.

AFN2330A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.

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