ON Semiconductor FDN Datasheet | Specifications & PDF Download

Transistor - N-Channel, Logic Level, Enhancement Mode Field Effect FDN337N General Description SUPERSOTt−3 N−Channel logic level enhancement mode po

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FDN335N April 1999 FDN335N N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using

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SMD Type Product specification FDN8601 100 V, 2.7 A, 109 m: Features „ Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A „ Max rDS(on) = 175 m: at VGS

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FDN86265P P-Channel PowerTrench® MOSFET May 2014 FDN86265P P-Channel PowerTrench® MOSFET -150 V, -0.8 A, 1.2 Ω Features General Description „ Max

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November 1998 FDN336P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using

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FDN338P FDN338P P-Channel 2.5V Specified PowerTrench® MOSFET November 2013 General Description This P-Channel 2.5V specified MOSFET uses Fairchild’

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FDN5618P July 2000 PRELIMINARY FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description This 60V P-Channel MOSFET uses Fairchild’s

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FDN5630 March 2000 FDN5630 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the

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MOSFET – N-Channel, Logic Level, POWERTRENCH) 60 V, 1.6 A, 98 mW FDN5632N-F085 Features • RDS(on) = 98 mW at VGS = 4.5 V, ID = 1.6 A • RDS(on) = 82 m

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DATA SHEET www.onsemi.com MOSFET – Single, P-Channel, POWERTRENCH) FDN360P General Description This P−Channel Logic Level MOSFET is produced using on

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MOSFET – N-Channel, POWERTRENCH), Logic Level FDN359BN General Description This N−Channel Logic Level MOSFET is produced using onsemi’s advanced POW

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MOSFET – N-Channel, POWERTRENCH) 100 V, 2.7 A, 109 mW FDN8601 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTREN

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MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 60 V, 2.6 A, 116 mW FDN86501LZ General Description This N−Channel MOSFET is produced using onsemi’s ad

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MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) FDN338P General Description This P−Channel 2.5 V specified MOSFET uses onsemi’s advanced low voltag

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MOSFET – P-Channel, 1.8 V Specified, POWERTRENCH) FDN304PZ General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low volta

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DATA SHEET www.onsemi.com MOSFET – Single, P-Channel, POWERTRENCH), Logic Level FDN340P SOT−23 CASE 527AG General Description This P−Channel Logic

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FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gat

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FDN304P January 2001 FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

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FDN306P December 2001 FDN306P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

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FDN308P February 2001 FDN308P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged ga

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