Datasheet Details
| Part number | FDN338P |
|---|---|
| Manufacturer | Fairchild (onsemi) |
| File Size | 321.71 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 FDN338P Datasheet
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Description
This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management applications.
Battery management Load switch Battery protectionFeatures
- 1.6 A,.
- 20 V. RDS(ON) = 115 mΩ @ VGS =.
- 4.5 V RDS(ON) = 155 mΩ @ VGS =.
- 2.5 V.
- Fast switching speed.
- High performance trench technology for extremely low RDS(ON).
- SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint DD S SuperSOTTM-3 G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage.