FDN337N Datasheet (ON Semiconductor)

FDN337N, N-Channel MOSFET

SUPERSOTt *3 N *Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on *state resistance.

These devices are particularly

FDN337N Features

* 2.2 A, 30 V

* RDS(on) = 0.065 W @ VGS = 4.5 V

* RDS(on) = 0.082 W @ VGS = 2.5 V

* Industry Standard Outline SOT

* 23 Surface Mount Package Using Proprietary SUPERSOT

* 3 Design for Superior Thermal and Electrical Capabilities

* High Density Cell